MMSTA56 [BL Galaxy Electrical]

PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
MMSTA56
型号: MMSTA56
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

PNP Silicon Epitaxial Planar Transistor
PNP硅外延平面晶体管

晶体 晶体管 开关 光电二极管
文件: 总3页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BL Galaxy Electrical  
Production specification  
PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56  
FEATURES  
Pb  
Lead-free  
z
z
z
Power dissipation.(PC=200mW).  
Epitaxial planar die construction.  
Also available in lead free version.  
APPLICATIONS  
z
General purpose application and switching application.  
SOT-323  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
MMSTA55  
MMSTA56  
K2H  
K2G  
SOT-323  
SOT-323  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
MMSTA55  
MMSTA56  
-60  
-80  
VCBO  
VCEO  
VEBO  
IC  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
MMSTA55  
MMSTA56  
MMSTA55  
MMSTA56  
-60  
-80  
V
-4  
V
Collector Current -Continuous  
Collector Dissipation  
-500  
200  
mA  
mW  
PC  
Tj,Tstg  
Junction and Storage Temperature  
-55~150  
Document number: BL/SSSTF063  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Parameter  
Symbol Test conditions  
MIN TYP MAX  
UNIT  
IC=-100μA,IE=0 MMSTA55 -60  
Collector-base breakdown voltage V(BR)CBO  
V
MMSTA56 -80  
Collector-emitter breakdown  
IC=-1mA,IB=0 MMSTA55 -60  
MMSTA56 -80  
V(BR)CEO  
V
V
voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)EBO  
IE=-100μA,IC=0  
-4  
VCB=-60V,IE=0 MMSTA55  
VCB=-80V,IE=0 MMSTA56  
-0.1  
-0.1  
ICBO  
μA  
μA  
VCE=-50V,IB=0 MMSTA55  
VCE=-60V,IB=0 MMSTA56  
-0.1  
-0.1  
Collector cut-off current  
DC current gain  
ICEO  
VCE=-1V,IC=-10mA  
VCE=-1V,IC=-100mA  
100  
100  
hFE  
Collector-emitter saturation  
voltage  
VCE(sat)  
IC=-100mA, IB=-10mA  
VCE=-1V, IC=-100mA  
-0.25  
-1.2  
V
V
Base-emitter on voltage  
Transition frequency  
VBE(on)  
VCE=-1V,IC= -100mA,  
f=100MHz  
fT  
50  
MHz  
Document number: BL/SSSTF063  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
PNP Silicon Epitaxial Planar Transistor MMSTA55/MMSTA56  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-323  
SOT-323  
Min  
Dim  
A
Max  
2.2  
1.8  
B
1.15  
1.35  
C
D
E
1.0Typical  
0.15  
0.25  
1.2  
0.35  
0.40  
1.4  
G
H
J
0.02  
0.1  
0.1Typical  
K
2.1  
2.3  
All Dimensions in mm  
PACKAGE INFORMATION  
Device  
Package  
Shipping  
MMSTA55/MMSTA56  
SOT-323  
3000/Tape&Reel  
Document number: BL/SSSTF063  
Rev.A  
www.galaxycn.com  
3

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